H8G1Z1VEE1
26.5-29.5 GHz, End-fire Radiation, 5.0 dBi Gain, Linear Phased Array Cell AiP
Engineered for demanding RF systems.
Built for integration.
Description
The H8G1Z1VEE1 is a PCB-edge-mounting AiP designed for operation in the mmWave frequency band, featuring end-fire radiation with vertical-polarization profile. It delivers high-performance radiation across the n257 band (26.5 GHz to 29.5 GHz), offering a realized gain of 5.0 dBi, a VSWR < 2, and a 60-deg half-power beamwidth. This AiP could also works with multiple unit in the linear phased array, supporting +/-45 deg of beamforming range. Each AiP structure is housed in a compact 5.8 mm x 19 mm footprint with a quad-flat feeding pad, enabling direct connection to a 50-ohm microstrip line on edge of motherboard PCB without need for external matching elements. The package has a height of 0.7 mm.
Features
- 5.0 dBi realized gain
- 85% radiation efficiency
- 50-ohm matched Impedance bandwidth 26~30 GHz (VSWR<2)
- Half Power Beam Width: 60 deg
- 5.8 mm x 19 mm footprint, 0.7 mm height
- Tool-free integration onto the PCB as a surface-mount device (SMD)
- Designed for robustness, ensuring compatibility with PCBs across a variety of substrate thicknesses and dielectric constants (Dk)
- High tolerance on mounting misalignment
- Vertical polarizations orthogonal to the motherboard PCB plane
Applications
- 5G micro base-stations
- End-user compact devices
- AR/VR devices
- Internet of Things (high speed)
- Mobile devices
System detail.
Need the full technical brief?
Request the datasheet or technical brief and our engineering team will follow up, usually within one business day. Prefer email? Write to marketing@millibeam.com and quote the part number.
