General-Purpose Amplifiers
H5D1E1
3.1-4.2 GHz, GaN MMIC General-purpose Amplifier in a Low-cost Package
KEY SPECIFICATIONS
Engineered for demanding RF systems.
SPEC 01
3.1 – 4.2
SPEC 02
30 (±0.5 dB)
SPEC 03
3 dB noise Figure
PRODUCT OVERVIEW
Built for integration.
Description
The H5D1E1 is a general-purpose amplifier that is optimal for local oscillator (LO), buffer amplifiers and general-purpose amplifiers requiring low-noise figure operating in the 3.1-4.2 GHz bandwidth. It is used in 5G, radar, satcom systems and point-to-point radio implementations. Built on reliable, compact and cost efficient GaN silicon technology, this MMIC is housed in a 4 mm x 5 mm QFN package, suitable for use in a 50 Ω environment without external matching elements.
Features
- Robust General-purpose Amplifier without the need for input power protection through RF limiters
- Excellent Noise Figure of 3 dB
- 30 dB gain and exceptional gain flatness (±0.5 dB across the band)
- High linearity - guaranteed high IP3
- 50 Ω matched at input and output RF terminals
- 2-stage GaN amplifier MMIC, VDD = 20V
- Single VGG and VDD supply pins for all transistor stages
- ESD protection
Applications
- Defence Applications (Radar, UAV)
- Satellite Communications
- Measurement and Instrumentation
- Radio System Integration
- Wireless Communications
TECHNICAL VIEW
System detail.
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Request the datasheet or technical brief and our engineering team will follow up, usually within one business day. Prefer email? Write to marketing@millibeam.com and quote the part number.
